Understanding of BTI for tunnel FETs

W. Mizubayashi, T. Mori, K. Fukuda, Y. Ishikawa, Y. Morita, S. Migita, H. Ota, Y. X. Liu, S. O'Uchi, J. Tsukada, H. Yamauchi, T. Matsukawa, M. Masahara, K. Endo

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

We systematically investigated the NBTI degradation of Si-channel p-type tunnel FETs (pTFETs). The NBTI degradation mechanism of pTFETs is almost the same as that of pFETs. It was clarified that the NBTI degradation of pTFETs is only caused by the trap charge and the interface state degradation located in the tunneling region near the n+ source/gate edge. Furthermore, in terms of the BTI degradation of n-and p-type TFETs, although the injection sources of carriers inducing PBTI and NBTI are different, applying a drain bias corresponding to the operation conditions has an effect on the BTI lifetime improvement of n-and p-type TFETs.

本文言語English
ホスト出版物のタイトル2015 IEEE International Electron Devices Meeting, IEDM 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ページ14.3.1-14.3.4
ISBN(電子版)9781467398930
DOI
出版ステータスPublished - 2015 2 16
外部発表はい
イベント61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
継続期間: 2015 12 72015 12 9

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
2016-February
ISSN(印刷版)0163-1918

Other

Other61st IEEE International Electron Devices Meeting, IEDM 2015
国/地域United States
CityWashington
Period15/12/715/12/9

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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