Ultraviolet laser photoemission spectroscopy of FeSi: Observation of a gap opening in density of states

K. Ishizaka, T. Kiss, T. Shimojima, T. Yokoya, T. Togashi, S. Watanabe, C. Q. Zhang, C. T. Chen, Y. Onose, Y. Tokura, S. Shin

研究成果: Article査読

40 被引用数 (Scopus)

抄録

The temperature (T) dependent gap formation in the density of states (DOS) of FeSi has been investigated by angle-integrated laser photoemission spectroscopy (PES). With decreasing T, the evolution of a small gap (∼60meV) at the Fermi level is observed in the DOS, indicating a p-type semiconducting character of this compound. The Fermi edge, which has been controversial in all past PES studies, is extremely small at 5K in accordance with transport and optical experiments. The T dependence of the gap, which gets smeared out quickly at high T as in optical conductivity spectrum, suggests the existence of a strong scattering mechanism beyond thermal excitations.

本文言語English
論文番号233202
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
72
23
DOI
出版ステータスPublished - 2005 12 15
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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