Ultraviolet-induced damage in fluorocarbon plasma and its reduction by pulse-time-modulated plasma in charge coupled device image sensor wafer processes

Mitsuru Okigawa, Yasushi Ishikawa, Yoshinari Ichihashi, Seiji Samukawa

研究成果: Article査読

35 被引用数 (Scopus)

抄録

Highly sensitive charge coupled device (CCD) image sensors present a number of serious problems, such as increased dark current and interface states induced by plasma etching processes. In particular, irradiation with ultraviolet (UV) photons (200 to 310 nm) generates this damage. UV absorption at the Si/SiO2 interface may contribute to increasing the density of the interface states. To solve this problem we investigated optimum fluorocarbon gas chemistries and the effect of pulse-time-modulated (TM) plasma. We found that selecting appropriate gas chemistries and using TM plasma drastically reduced the dark current in CCDs.

本文言語English
ページ(範囲)2818-2822
ページ数5
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
22
6
DOI
出版ステータスPublished - 2004 11 1

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 表面および界面
  • 物理学および天文学(その他)

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