Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures

Manabu Ishimaru; Yuusuke Tanaka; Shigehiko Hasegawa; Hajime Asahi; Kazuhisa Sato; Toyohiko J. Konno

doi:10.1063/1.3117507

Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures

Manabu Ishimaru, Yuusuke Tanaka, Shigehiko Hasegawa, Hajime Asahi, Kazuhisa Sato, Toyohiko J. Konno

金属材料研究所・材料プロセス・評価研究部

研究成果: Article › 査読

5 被引用数 (Scopus)

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We prepared TlInGaAsN/TlInP quantum well structures using gas source molecular-beam epitaxy and characterized them by means of transmission electron microscopy and scanning transmission electron microscopy. It was found that naturally formed vertical quantum wells, so-called lateral composition modulation (LCM), with a periodicity of ∼1 nm are formed in TlInGaAsN layers. We discuss their formation process using a simple kinetic Ising model for layer-by-layer growth, and point out that the formation of ultrashort-period LCM is a universal phenomenon in most of epitaxially grown III-V semiconductor alloys.

本文言語	English
論文番号	153103
ジャーナル	Applied Physics Letters
巻	94
号	15
DOI	https://doi.org/10.1063/1.3117507
出版ステータス	Published - 2009

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.3117507

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T1 - Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures

AU - Ishimaru, Manabu

AU - Tanaka, Yuusuke

AU - Hasegawa, Shigehiko

AU - Asahi, Hajime

AU - Sato, Kazuhisa

AU - Konno, Toyohiko J.

PY - 2009

Y1 - 2009

N2 - We prepared TlInGaAsN/TlInP quantum well structures using gas source molecular-beam epitaxy and characterized them by means of transmission electron microscopy and scanning transmission electron microscopy. It was found that naturally formed vertical quantum wells, so-called lateral composition modulation (LCM), with a periodicity of ∼1 nm are formed in TlInGaAsN layers. We discuss their formation process using a simple kinetic Ising model for layer-by-layer growth, and point out that the formation of ultrashort-period LCM is a universal phenomenon in most of epitaxially grown III-V semiconductor alloys.

AB - We prepared TlInGaAsN/TlInP quantum well structures using gas source molecular-beam epitaxy and characterized them by means of transmission electron microscopy and scanning transmission electron microscopy. It was found that naturally formed vertical quantum wells, so-called lateral composition modulation (LCM), with a periodicity of ∼1 nm are formed in TlInGaAsN layers. We discuss their formation process using a simple kinetic Ising model for layer-by-layer growth, and point out that the formation of ultrashort-period LCM is a universal phenomenon in most of epitaxially grown III-V semiconductor alloys.

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Ultrashort-period lateral composition modulation in TlInGaAsN/TlInP structures

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