Ultrahigh vacuum system for atomic-scale planarization of 6 inch Si(001) substrate

Ken Idota, Masaaki Niwa, Isao Sumita

研究成果: Article査読

抄録

Ultrahigh vacuum (UHV) system equipped with aluminum radiation shields has been developed in order to obtain atomically flat Si(001) surfaces in a large area. Aluminum radiation shields were employed to suppress the temperature rise of chamber walls. The UHV system has enabled a 6 inch substrate to be heated up to 700°C under a pressure of less than 10 -8 Pa range. The surface structure of the substrate was confirmed by the reflection high energy electron diffraction (RHEED), when the 6 inch substrate was heated at 600°C in UHV after a modified RCA cleaning, the RHEED pattern indicated oxide free surface consisted of 2 × 1 structure. The roughness was evaluated from numerous observations by cross-sectional transmission electron microscopy (XTEM). Root-mean-square roughness of the Si surface was less than 0.1 nm for almost all over the 6 inch substrate. This implies that the heating in this system gives rise to the atomic-scale planarization of the 6 inch substrate.

本文言語English
ページ(範囲)311-315
ページ数5
ジャーナルApplied Surface Science
100-101
DOI
出版ステータスPublished - 1996 7
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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