We report on room- Temperature plasmonic detection of sub- Terahertz radiation by InAlAs/InGaAs/ InP high electron mobility transistors with an asymmetric dual-grating-gate structure. Maximum responsivities of 22.7 kV/W at 200GHz and 21.5 kV/W at 292 GHz were achieved under unbiased drain- To-source condition. The minimum noise equivalent power was estimated to be 0.48 pW/Hz°5 at 200GHz at room temperature, which is the record-breaking value ever reported for plasmonic THz detectors. Frequency dependence of the responsivity in the frequency range of 0.2-2 THz is in good agreement with the theory.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)