Ultrahigh sensitive sub- Terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

Y. Kurita, G. Ducoumau, D. Coquillat, A. Satou, K. Kobayashi, S. Boubanga Tombet, Y. M. Meziani, V. V. Popov, W. Knap, T. Suemitsu, T. Otsuji

研究成果: Article査読

71 被引用数 (Scopus)

抄録

We report on room- Temperature plasmonic detection of sub- Terahertz radiation by InAlAs/InGaAs/ InP high electron mobility transistors with an asymmetric dual-grating-gate structure. Maximum responsivities of 22.7 kV/W at 200GHz and 21.5 kV/W at 292 GHz were achieved under unbiased drain- To-source condition. The minimum noise equivalent power was estimated to be 0.48 pW/Hz°5 at 200GHz at room temperature, which is the record-breaking value ever reported for plasmonic THz detectors. Frequency dependence of the responsivity in the frequency range of 0.2-2 THz is in good agreement with the theory.

本文言語English
論文番号251114
ジャーナルApplied Physics Letters
104
25
DOI
出版ステータスPublished - 2014 6 23

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「Ultrahigh sensitive sub- Terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル