Ultrahigh sensitive plasmonic terahertz detectors based on an asymmetric dual-grating gate HEMT structure

Taiichi Otsuji, Stephane Boubanga-Tombet, Takayuki Watanabe, Yudai Tanimoto, Akira Satou, Tetsuya Suemitsu, Yuye Wang, Hiroaki Minamide, Hiromasa Ito, Yahya Moubarak Meziani, Dominique Coquillat, Wojciech Knap, Denis Fateev, Viacheslav Popov

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric double-grating-gate (A-DGG) high electron mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz with a superior low noise equivalent power of 15 pW/√Hz using InGaAs/InAlAs/InP material systems. When THz radiation is absorbed strong THz photocurrent is first generated by the nonlinearity of the plasmon modes resonantly excited in undepleted portions of the 2D electron channel under the high-biased sub-grating of the A-DGG, then the THz photovoltaic response is read out at high-impedance parts of 2D channel under the other sub-grating biased at the level close to the threshold. Extraordinary enhancement by more than two orders of magnitude of the responsivity is verified with respect to that for a symmetric DGG structure.

本文言語English
ホスト出版物のタイトルTerahertz Physics, Devices, and Systems VI
ホスト出版物のサブタイトルAdvanced Applications in Industry and Defense
DOI
出版ステータスPublished - 2012 12 1
イベントTerahertz Physics, Devices, and Systems VI: Advanced Applications in Industry and Defense - Baltimore, MD, United States
継続期間: 2012 4 232012 4 24

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
8363
ISSN(印刷版)0277-786X

Other

OtherTerahertz Physics, Devices, and Systems VI: Advanced Applications in Industry and Defense
CountryUnited States
CityBaltimore, MD
Period12/4/2312/4/24

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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