Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

Takayuki Watanabe, Stephane Boubanga Tombet, Yudai Tanimoto, Yuye Wang, Hiroaki Minamide, Hiromasa Ito, Denis Fateev, Viacheslav Popov, Dominique Coquillat, Wojciech Knap, Yahya Meziani, Taiichi Otsuji

研究成果: Article査読

60 被引用数 (Scopus)

抄録

We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric dual-grating-gate (A-DGG) high electron mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz with a superior low noise equivalent power of 15 pW/√Hz using InGaAs/InAlAs/InP material systems. When THz radiation is absorbed strong THz photocurrent is first generated by the nonlinearity of the plasmon modes resonantly excited in undepleted portions of the 2D electron channel under the high-biased sub-grating of the A-DGG (as a quadratic nature of the product of local carrier density and velocity perturbations), then the THz photovoltaic response is read out at high-impedance parts of 2D channel under the other sub-grating biased at the level close to the threshold. Extraordinary enhancement by more than two orders of magnitude of the responsivity is verified with respect to that for a symmetric DGG structure. front matter

本文言語English
ページ(範囲)109-114
ページ数6
ジャーナルSolid-State Electronics
78
DOI
出版ステータスPublished - 2012 12

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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