Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

Takayuki Watanabe; Stephane Boubanba Tombet; Yudai Tanimoto; Yuye Wang; Hiroaki Minamide; Hiromasa Ito; Denis Fateev; Viacheslav Popov; Dominique Coquillat; Wojciech Knap; Taiichi Otsuji

doi:10.1109/ISDRS.2011.6135193

Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

Takayuki Watanabe, Stephane Boubanba Tombet, Yudai Tanimoto, Yuye Wang, Hiroaki Minamide, Hiromasa Ito, Denis Fateev, Viacheslav Popov, Dominique Coquillat, Wojciech Knap, Taiichi Otsuji

電気通信研究所・ブロードバンド工学研究部門

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric double-grating-gate (A-DGG) HEMTs demonstrating a record responsivity of 2.2 kV/W at 1 THz. Hydrodynamic nonlinearities of two-dimensional (2D) plasmons in high-electron-mobility transistors (HEMTs) are promising for fast and sensitive rectification/detection of THz radiation [1], which can be applied to real-time THz imaging/spectroscopic analysis and future THz wireless communications [2]. Recently, InP- and GaN-based HEMTs as well as Si-MOSFETs have demonstrated improved responsivities [3,4], approaching 1 kV/W at 1 THz by introducing narrow-band dipole antenna structure merged with the gate electrode [3].

本文言語	English
ホスト出版物のタイトル	2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOI	https://doi.org/10.1109/ISDRS.2011.6135193
出版ステータス	Published - 2011
イベント	2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States 継続期間: 2011 12月 7 → 2011 12月 9

出版物シリーズ

名前	2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other	2011 International Semiconductor Device Research Symposium, ISDRS 2011
国/地域	United States
City	College Park, MD
Period	11/12/7 → 11/12/9

ASJC Scopus subject areas

ハードウェアとアーキテクチャ
電子工学および電気工学

文献へのアクセス

10.1109/ISDRS.2011.6135193

他のファイルとリンク

引用スタイル

Watanabe, T., Tombet, S. B., Tanimoto, Y., Wang, Y., Minamide, H., Ito, H., Fateev, D., Popov, V., Coquillat, D., Knap, W., & Otsuji, T. (2011). Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135193] (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135193

Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure. / Watanabe, Takayuki; Tombet, Stephane Boubanba; Tanimoto, Yudai その他.

2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135193 (2011 International Semiconductor Device Research Symposium, ISDRS 2011).

研究成果: Conference contribution

Watanabe, T, Tombet, SB, Tanimoto, Y, Wang, Y, Minamide, H, Ito, H, Fateev, D, Popov, V, Coquillat, D, Knap, W & Otsuji, T 2011, Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135193, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 11/12/7. https://doi.org/10.1109/ISDRS.2011.6135193

Watanabe T, Tombet SB, Tanimoto Y, Wang Y, Minamide H, Ito H その他. Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135193. (2011 International Semiconductor Device Research Symposium, ISDRS 2011). doi: 10.1109/ISDRS.2011.6135193

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title = "Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure",

abstract = "We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric double-grating-gate (A-DGG) HEMTs demonstrating a record responsivity of 2.2 kV/W at 1 THz. Hydrodynamic nonlinearities of two-dimensional (2D) plasmons in high-electron-mobility transistors (HEMTs) are promising for fast and sensitive rectification/detection of THz radiation [1], which can be applied to real-time THz imaging/spectroscopic analysis and future THz wireless communications [2]. Recently, InP- and GaN-based HEMTs as well as Si-MOSFETs have demonstrated improved responsivities [3,4], approaching 1 kV/W at 1 THz by introducing narrow-band dipole antenna structure merged with the gate electrode [3].",

author = "Takayuki Watanabe and Tombet, {Stephane Boubanba} and Yudai Tanimoto and Yuye Wang and Hiroaki Minamide and Hiromasa Ito and Denis Fateev and Viacheslav Popov and Dominique Coquillat and Wojciech Knap and Taiichi Otsuji",

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doi = "10.1109/ISDRS.2011.6135193",

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AU - Watanabe, Takayuki

AU - Tombet, Stephane Boubanba

AU - Tanimoto, Yudai

AU - Wang, Yuye

AU - Minamide, Hiroaki

AU - Ito, Hiromasa

AU - Fateev, Denis

AU - Popov, Viacheslav

AU - Coquillat, Dominique

AU - Knap, Wojciech

AU - Otsuji, Taiichi

PY - 2011

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N2 - We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric double-grating-gate (A-DGG) HEMTs demonstrating a record responsivity of 2.2 kV/W at 1 THz. Hydrodynamic nonlinearities of two-dimensional (2D) plasmons in high-electron-mobility transistors (HEMTs) are promising for fast and sensitive rectification/detection of THz radiation [1], which can be applied to real-time THz imaging/spectroscopic analysis and future THz wireless communications [2]. Recently, InP- and GaN-based HEMTs as well as Si-MOSFETs have demonstrated improved responsivities [3,4], approaching 1 kV/W at 1 THz by introducing narrow-band dipole antenna structure merged with the gate electrode [3].

AB - We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric double-grating-gate (A-DGG) HEMTs demonstrating a record responsivity of 2.2 kV/W at 1 THz. Hydrodynamic nonlinearities of two-dimensional (2D) plasmons in high-electron-mobility transistors (HEMTs) are promising for fast and sensitive rectification/detection of THz radiation [1], which can be applied to real-time THz imaging/spectroscopic analysis and future THz wireless communications [2]. Recently, InP- and GaN-based HEMTs as well as Si-MOSFETs have demonstrated improved responsivities [3,4], approaching 1 kV/W at 1 THz by introducing narrow-band dipole antenna structure merged with the gate electrode [3].

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M3 - Conference contribution

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T3 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

BT - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

T2 - 2011 International Semiconductor Device Research Symposium, ISDRS 2011

Y2 - 7 December 2011 through 9 December 2011

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Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

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