Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

Takayuki Watanabe, Stephane Boubanba Tombet, Yudai Tanimoto, Yuye Wang, Hiroaki Minamide, Hiromasa Ito, Denis Fateev, Viacheslav Popov, Dominique Coquillat, Wojciech Knap, Taiichi Otsuji

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

We report on ultrahigh sensitive, broadband terahertz (THz) detectors based on asymmetric double-grating-gate (A-DGG) HEMTs demonstrating a record responsivity of 2.2 kV/W at 1 THz. Hydrodynamic nonlinearities of two-dimensional (2D) plasmons in high-electron-mobility transistors (HEMTs) are promising for fast and sensitive rectification/detection of THz radiation [1], which can be applied to real-time THz imaging/spectroscopic analysis and future THz wireless communications [2]. Recently, InP- and GaN-based HEMTs as well as Si-MOSFETs have demonstrated improved responsivities [3,4], approaching 1 kV/W at 1 THz by introducing narrow-band dipole antenna structure merged with the gate electrode [3].

本文言語English
ホスト出版物のタイトル2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOI
出版ステータスPublished - 2011 12 1
イベント2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
継続期間: 2011 12 72011 12 9

出版物シリーズ

名前2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
国/地域United States
CityCollege Park, MD
Period11/12/711/12/9

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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