Ultrahigh room-temperature hole Hall and effective mobility in Si 0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures

T. Irisawa, S. Tokumitsu, T. Hattori, K. Nakagawa, S. Koh, Y. Shiraki

    研究成果: Article査読

    92 被引用数 (Scopus)

    抄録

    We have obtained ultrahigh room-temperature (RT) hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures with very small parallel conduction. Reducing parallel conduction was achieved by employing Sb doping in Si0.3Ge 0.7 buffer layers, which drastically increased RT hole Hall mobility up to 2100 cm2/Vs in the strained Ge channel modulation-doped structures and improved device characteristics of the p-type metal-oxide-semiconductor field-effect transistors with the strained Ge channel. The peak effective mobility reached to 2700 cm2/Vs at RT, which was much higher than the bulk Ge drift mobility.

    本文言語English
    ページ(範囲)847-849
    ページ数3
    ジャーナルApplied Physics Letters
    81
    5
    DOI
    出版ステータスPublished - 2002 7月 29

    ASJC Scopus subject areas

    • 物理学および天文学(その他)

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