Ultra shallow sidewall GaAs tunnel junctions implemented with molecular layer epitaxy

T. Ohno, Y. Oyama, K. Tezuka, K. Suto, J. Nishizawa

研究成果: Conference contribution

抄録

Low-temperature (290°C) area selective regrowth by molecular layer epitaxy (MLE) was applied for the fabrication of ultra shallow sidewall GaAs tunnel junctions with the junction depth of 50 nm at 100 μm long strip. Fabricated tunnel junctions have shown the record peak current density up to 35000 A/cm2. It is shown that the tunnel junction characteristics are seriously dependent on the sidewall orientation and the regrown interface quality, which is controlled by the surface treatment under AsH3 just prior to regrowth. MLE with the low-temperature area selective regrowth process is one of the most promising methods for the fabrication of ultra short channel devices.

本文言語English
ホスト出版物のタイトルExtended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002
出版社Institute of Electrical and Electronics Engineers Inc.
ページ59-62
ページ数4
ISBN(電子版)4891140283, 9784891140281
DOI
出版ステータスPublished - 2002 1 1
イベント3rd International Workshop on Junction Technology, IWJT 2002 - Tokyo, Japan
継続期間: 2002 12 22002 12 3

出版物シリーズ

名前Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002

Other

Other3rd International Workshop on Junction Technology, IWJT 2002
CountryJapan
CityTokyo
Period02/12/202/12/3

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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