Ultra-low-power and high-speed SiGe base bipolar transistors for wireless telecommunication systems

Masao Kondo, Katsuya Oda, Eiji Ohue, Hiromi Shimamoto, Masamichi Tanabe, Takahiro Onai, Katsuyoshi Washio

研究成果: Article査読

20 被引用数 (Scopus)

抄録

Ultra-low-power and high-speed SiGe base bipolar transistors that can be used in RF sections of multi-GHz telecommunication systems have been developed. The SiGe base and a poly-Si/SiGe base-contact were formed by selective growth in a self-aligned manner. The transistors have a very small base-collector capacitance (below 1 fF for an emitter area of 0.2 x 0.7 /urn) and exhibit a high maximum oscillation frequency (30-70 GHz) at low current (5-100 /iA). The power-delay product of an ECL ring oscillator is only 5.1 fj/gate for a 250-mV voltage swing. The maximum toggle frequency of a one-eigth static divider is 4.7 GHz at a switching current of 68 /uA/FF.

本文言語English
ページ(範囲)1287-1294
ページ数8
ジャーナルIEEE Transactions on Electron Devices
45
6
DOI
出版ステータスPublished - 1998
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

フィンガープリント

「Ultra-low-power and high-speed SiGe base bipolar transistors for wireless telecommunication systems」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル