A 2.5 kV-1000 A Power Pack insulated gate bipolar transistor (IGBT) used to solve high frequency, high temperature, and any terrible circumstances is presented. One of the important improvements for the IGBT chip and diode chips is the contact technology and electric discharge capability. In addition, by using the original size of large IGBT and diode chip in a square flat package structure, a compact and powerful device was achieved.
|出版ステータス||Published - 1997|
|イベント||Proceedings of the 1997 9th International Symposium on Power Semiconductor Devices and ICs, ISPSD - Weimer, Ger|
継続期間: 1997 5 26 → 1997 5 29
|Other||Proceedings of the 1997 9th International Symposium on Power Semiconductor Devices and ICs, ISPSD|
|Period||97/5/26 → 97/5/29|
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