Ultra high-power 2.5 kV-1800 A Power Pack IGBT

Yoshikazu Takahashi, Koh Yoshikawa, Takeharu Koga, Masayuki Soutome, Tetsumi Takano, Humiaki Kirihata, Yasukazu Seki

研究成果: Paper査読

25 被引用数 (Scopus)

抄録

A 2.5 kV-1000 A Power Pack insulated gate bipolar transistor (IGBT) used to solve high frequency, high temperature, and any terrible circumstances is presented. One of the important improvements for the IGBT chip and diode chips is the contact technology and electric discharge capability. In addition, by using the original size of large IGBT and diode chip in a square flat package structure, a compact and powerful device was achieved.

本文言語English
ページ233-236
ページ数4
出版ステータスPublished - 1997
外部発表はい
イベントProceedings of the 1997 9th International Symposium on Power Semiconductor Devices and ICs, ISPSD - Weimer, Ger
継続期間: 1997 5 261997 5 29

Other

OtherProceedings of the 1997 9th International Symposium on Power Semiconductor Devices and ICs, ISPSD
CityWeimer, Ger
Period97/5/2697/5/29

ASJC Scopus subject areas

  • 電子工学および電気工学

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