Ultra compact, low thermal impedance and high reliability module structure with SiC Schottky barrier diodes

Yoshinari Ikeda, Norihiro Nashida, Masafumi Horio, Hiromu Takubo, Yoshikazu Takahashi

研究成果: Conference contribution

14 被引用数 (Scopus)

抄録

An advanced module structure for taking advantage of superior characteristics of Silicon Carbide (SiC) device was researched and developed. This structure can realize about four times of power rating density and one half of thermal impedance compared to that of conventional structure. Also, this structure achieved to have higher reliability by applying epoxy molding structure and copper pin connection to conduct current to/from power chips instead of aluminum bonding wire.

本文言語English
ホスト出版物のタイトル2011 26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011
ページ1298-1300
ページ数3
DOI
出版ステータスPublished - 2011 5月 13
外部発表はい
イベント26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011 - Fort Worth, TX, United States
継続期間: 2011 3月 62011 3月 10

出版物シリーズ

名前Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Other

Other26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011
国/地域United States
CityFort Worth, TX
Period11/3/611/3/10

ASJC Scopus subject areas

  • 電子工学および電気工学

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