Ultimate top-down processes for future nanoscale devices

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

For the past 30 years, plasma etching technology has led in the efforts to shrink the pattern size of ultralarge-scale integrated (ULSI) devices. However, inherent problems in the plasma processes, such as charge buildup and UV photon radiation, limit the etching performance for nanoscale devices. To overcome these problems and fabricate sub-10-nm devices in practice, neutral-beam etching has been proposed. In this paper, we introduce the ultimate etching processes using neutral-beam sources and discuss the fusion of top-down and bottom-up processing for future nanoscale devices. Neutral beams can perform atomically damage-free etching and surface modification of inorganic and organic materials. This technique is a promising candidate for the practical fabrication technology for future nano-devices.

元の言語English
ホスト出版物のタイトルAdvanced Etch Technology for Nanopatterning
DOI
出版物ステータスPublished - 2012 12 1
イベントAdvanced Etch Technology for Nanopatterning - San Jose, CA, United States
継続期間: 2012 2 132012 2 14

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
8328
ISSN(印刷物)0277-786X

Other

OtherAdvanced Etch Technology for Nanopatterning
United States
San Jose, CA
期間12/2/1312/2/14

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

フィンガープリント 「Ultimate top-down processes for future nanoscale devices」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル