Ultimate top-down processes for future nanoscale devices

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

For the past 30 years, plasma etching technology has led in the efforts to shrink the pattern size of ultralarge-scale integrated (ULSI) devices. However, inherent problems in the plasma processes, such as charge buildup and UV photon radiation, limit the etching performance for nanoscale devices. To overcome these problems and fabricate sub-10-nm devices in practice, neutral-beam etching has been proposed. In this paper, we introduce the ultimate etching processes using neutral-beam sources and discuss the fusion of top-down and bottom-up processing for future nanoscale devices. Neutral beams can perform atomically damage-free etching and surface modification of inorganic and organic materials. This technique is a promising candidate for the practical fabrication technology for future nano-devices.

本文言語English
ホスト出版物のタイトルAdvanced Etch Technology for Nanopatterning
DOI
出版ステータスPublished - 2012
イベントAdvanced Etch Technology for Nanopatterning - San Jose, CA, United States
継続期間: 2012 2月 132012 2月 14

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
8328
ISSN(印刷版)0277-786X

Other

OtherAdvanced Etch Technology for Nanopatterning
国/地域United States
CitySan Jose, CA
Period12/2/1312/2/14

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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