Twin boundary formation at a grain-boundary groove during the directional solidification of InSb

Keiji Shiga, Atsuko Takahashi, Lu Chung Chuang, Kensaku Maeda, Haruhiko Morito, Kozo Fujiwara

研究成果: Article査読

抄録

We investigated twin boundary formation during directional solidification of the compound semiconductor InSb. We directly observed a groove formed at the junction of a solid–liquid interface and a Σ9 grain-boundary by optical microscopy. When the depth of the grain-boundary groove reached about 100 μm, rapid growth occurred to fill the groove. We found that two facet planes of the grain-boundary groove became twin boundary planes. Calculations of the change in free energy associated with nucleation at the grain-boundary groove indicates that the preferential twin nucleation occurs at the bottom of the groove, consistent with the direct observations in this study.

本文言語English
論文番号126403
ジャーナルJournal of Crystal Growth
577
DOI
出版ステータスPublished - 2022 1 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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