TY - JOUR
T1 - Twin boundary formation at a grain-boundary groove during the directional solidification of InSb
AU - Shiga, Keiji
AU - Takahashi, Atsuko
AU - Chuang, Lu Chung
AU - Maeda, Kensaku
AU - Morito, Haruhiko
AU - Fujiwara, Kozo
N1 - Funding Information:
This work was supported by JSPS KAKENHI Grant numbers JP20K15070 and JP21H04658. This work was also supported by the SEI Group CSR Foundation.
Publisher Copyright:
© 2021 Elsevier B.V.
PY - 2022/1/1
Y1 - 2022/1/1
N2 - We investigated twin boundary formation during directional solidification of the compound semiconductor InSb. We directly observed a groove formed at the junction of a solid–liquid interface and a Σ9 grain-boundary by optical microscopy. When the depth of the grain-boundary groove reached about 100 μm, rapid growth occurred to fill the groove. We found that two facet planes of the grain-boundary groove became twin boundary planes. Calculations of the change in free energy associated with nucleation at the grain-boundary groove indicates that the preferential twin nucleation occurs at the bottom of the groove, consistent with the direct observations in this study.
AB - We investigated twin boundary formation during directional solidification of the compound semiconductor InSb. We directly observed a groove formed at the junction of a solid–liquid interface and a Σ9 grain-boundary by optical microscopy. When the depth of the grain-boundary groove reached about 100 μm, rapid growth occurred to fill the groove. We found that two facet planes of the grain-boundary groove became twin boundary planes. Calculations of the change in free energy associated with nucleation at the grain-boundary groove indicates that the preferential twin nucleation occurs at the bottom of the groove, consistent with the direct observations in this study.
KW - A1. Defects
KW - A1. Directional solidification
KW - A1. Nucleation
KW - A1. Optical microscopy
KW - A2. Growth from melt
KW - B2. Semiconducting indium compounds
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U2 - 10.1016/j.jcrysgro.2021.126403
DO - 10.1016/j.jcrysgro.2021.126403
M3 - Article
AN - SCOPUS:85118360442
VL - 577
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
M1 - 126403
ER -