TY - JOUR
T1 - Tunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions
AU - Ohno, Takeo
AU - Oyama, Yutaka
AU - Nishizawa, Jun Ichi
PY - 2006/5/8
Y1 - 2006/5/8
N2 - Temperature dependence of current-voltage (I-V) characteristics of quantum-confined GaAs ultra-shallow sidewall p+n+ tunnel junctions has been investigated. The sidewall tunnel junctions with junction depths ranging from 5 nm to 50 nm were achieved by the combination of intermittent injection of TEG/AsH3 in an ultra high vacuum and a wet etching process of the GaAs growth layer. From the I-V results, abrupt negative differential resistances (NDR) were observed, which relate to direct/indirect tunneling and subband formation. The change in the number instances of NDR and their voltage positions also depended on the junction depth. Mechanisms of tunneling in the present sidewall tunnel junction will be discussed from the point of the sub-band formation in conduction bands.
AB - Temperature dependence of current-voltage (I-V) characteristics of quantum-confined GaAs ultra-shallow sidewall p+n+ tunnel junctions has been investigated. The sidewall tunnel junctions with junction depths ranging from 5 nm to 50 nm were achieved by the combination of intermittent injection of TEG/AsH3 in an ultra high vacuum and a wet etching process of the GaAs growth layer. From the I-V results, abrupt negative differential resistances (NDR) were observed, which relate to direct/indirect tunneling and subband formation. The change in the number instances of NDR and their voltage positions also depended on the junction depth. Mechanisms of tunneling in the present sidewall tunnel junction will be discussed from the point of the sub-band formation in conduction bands.
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U2 - 10.1002/pssc.200564135
DO - 10.1002/pssc.200564135
M3 - Conference article
AN - SCOPUS:33646203376
SN - 1862-6351
VL - 3
SP - 635
EP - 638
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
IS - 3
T2 - 32nd International Symposium on Compound Semiconductors, ISCS-2005
Y2 - 18 September 2005 through 22 September 2005
ER -