Tunneling in quantum confined GaAs ultrashallow sidewall tunnel junctions

Takeo Ohno, Yutaka Oyama, Jun Ichi Nishizawa

研究成果: Conference article査読

1 被引用数 (Scopus)


Temperature dependence of current-voltage (I-V) characteristics of quantum-confined GaAs ultra-shallow sidewall p+n+ tunnel junctions has been investigated. The sidewall tunnel junctions with junction depths ranging from 5 nm to 50 nm were achieved by the combination of intermittent injection of TEG/AsH3 in an ultra high vacuum and a wet etching process of the GaAs growth layer. From the I-V results, abrupt negative differential resistances (NDR) were observed, which relate to direct/indirect tunneling and subband formation. The change in the number instances of NDR and their voltage positions also depended on the junction depth. Mechanisms of tunneling in the present sidewall tunnel junction will be discussed from the point of the sub-band formation in conduction bands.

ジャーナルPhysica Status Solidi C: Conferences
出版ステータスPublished - 2006 5月 8
イベント32nd International Symposium on Compound Semiconductors, ISCS-2005 - Rust, Germany
継続期間: 2005 9月 182005 9月 22

ASJC Scopus subject areas

  • 凝縮系物理学


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