Tunneling current of GaAs ultrashallow sidewall n+p+n+ and p+n+in+ structure prepared by area-selective molecular layer epitaxy

Takeo Ohno, Yutaka Oyama

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Sidewall n+p+n+ and p+n+in+ structures were fabricated by area-selective molecular layer epitaxy of GaAs, and electrical evaluation was carried out on the structures by J -V measurement. In the n+p+n+ structure, tunneling current decreased as the thickness of the p+ layer increased. An Esaki peak was also observed when the p+ layer was thicker than the depletion layer. The J -V characteristic of the p+n+in+ structure depended on the thickness of the n+ layer, and its curve at the reverse bias shifted to the low voltage side when the n+ layer became thick.

本文言語English
ページ(範囲)2474-2477
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
7
10
DOI
出版ステータスPublished - 2010 10 1

ASJC Scopus subject areas

  • Condensed Matter Physics

フィンガープリント 「Tunneling current of GaAs ultrashallow sidewall n<sup>+</sup>p<sup>+</sup>n<sup>+</sup> and p<sup>+</sup>n<sup>+</sup>in<sup>+</sup> structure prepared by area-selective molecular layer epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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