Tunnel magnetoresistance effect using perpendicularly magnetized tetragonal and cubic Mn-Co-Ga Heusler alloy electrode

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Epitaxially grown tetragonal and cubic Mn-Co-Ga thin films were fabricated onto single crystalline Cr (001) under a layer. High perpendicular magnetic anisotropy is achieved in the tetragonal Mn2.3Co0.4Ga 1.3 film, and a small, unexpected perpendicular magnetic anisotropy was induced in the cubic Mn1.8Co1.2Ga1.0 film as well. The tunnel magnetoresistance (TMR) effect of the Mn-Co-Ga/MgO/CoFeB magnetic tunnel junctions (MTJs) were investigated. TMR ratios of 5% and 11% were observed at room temperature for the MTJs using tetragonal Mn 2.3Co0.4Ga1.3 and cubic Mn1.8Co 1.2Ga1.0 electrodes, respectively. The composition dependence is discussed briefly.

本文言語English
論文番号17C704
ジャーナルJournal of Applied Physics
115
17
DOI
出版ステータスPublished - 2014 5 7

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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