Trimethylgallium supply without the use of bubbling in gaas growth by metalorganic vapor phase epitaxy

Atsushi Ohuchi, Hideo Ohno, Shunsuke Ohtsuka, Hideki Hasegawa

研究成果: Article査読

抄録

In the growth of GaAs by metalorganic vapor phase epitaxy using trimethylgallium (TMG), TMG is usually transported by H2carrier gas saturated with TMG. Saturation of H2is normally done by bubbling H2gas through liquid TMG. Here, we show that saturation of H2with TMG can be achieved through flowing H2over the liquid or solid TMG, i.e. without the use of bubbling. The growth rate of GaAs grown by TMG supplied in this way with AsH3showed a linear dependence with the flow rate of H2over TMG regardless of whether TMG was liquid or solid.

本文言語English
ページ数1
ジャーナルJapanese journal of applied physics
27
12R
DOI
出版ステータスPublished - 1988 12
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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