Tribological effects of brush scrubbing in post chemical mechanical planarization cleaning on electrical characteristics in novel non-porous low-k dielectric fluorocarbon on Cu interconnects

Xun Gu, Takenao Nemoto, Yugo Tomita, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

研究成果: Article

7 引用 (Scopus)

抜粋

Damage reduction during planarization is strongly required to avoid scratch generation and the variation in the electrical properties of low-k dielectrics leading to yield loss in an integrated circuit after the implementation of an ultralow-k dielectric in Cu damascene interconnects. An optimum process condition to reduce damage on brush scrubbing in post-chemical-mechanical- planarization (post-CMP) cleaning was proposed for advanced nonporous organic ultralow-k dielectric fluorocarbon/Cu interconnects. Increasing brush rotation rate by decreasing down pressures results in the improvement in both electric properties and particle removal efficiency. The tribological effects of brush scrubbing in post-CMP cleaning on the electrical characteristics were explored. The brush scrubbing condition of a high brush rotation rate at low down pressures contributes to the suppression of damage generation.

元の言語English
記事番号05EC07
ジャーナルJapanese journal of applied physics
50
発行部数5 PART 2
DOI
出版物ステータスPublished - 2011 5 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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