Tri-gate polycrystalline silicon thin-film transistors fabricated by continuous-wave laser lateral crystallization with improved electron transport properties

Shuntaro Fujii, Shin Ichiro Kuroki, Yuya Kawasaki, Koji Kotani

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Tri-gate channel structures were applied to polycrystalline silicon (poly-Si) thin-film transistors (TFTs) fabricated by continuous-wave (CW) laser lateral crystallization (CLC). We had two objectives in using tri-gate structures in CLC poly-Si TFTs. One was the enhancement of effective electron mobility (μ eff) by using the tensile strain induced by the CLC process and the lateral-strain-relaxation effect in tri-gate structures. The other was the reduction of μ eff variation caused by increasing the number of surfaces with different crystal orientations by up to a factor of three. By applying tri-gate structures to CLC poly-Si TFTs, both 8% μ eff enhancement and 41% reduction of μ eff variation were achieved at the surface carrier density of 5 × 10 12 cm -2. These results are expected to be useful for the device size shrinkage of high-performance poly-Si TFT circuits.

本文言語English
論文番号02BJ03
ジャーナルJapanese journal of applied physics
51
2 PART 2
DOI
出版ステータスPublished - 2012 2

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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