TY - JOUR
T1 - Trench Coverage Characteristics of Polysilicon Deposited by Thermal Decomposition of Silane
AU - Morie, Takashi
AU - Murota, Junichi
PY - 1984/7
Y1 - 1984/7
N2 - Trench coverage of polysilicon deposited under low pressure using a SiH4–PH3–He system is investigated. The trench coverage becomes poorer with increasing SiH4or PH3partial pressure. This phenomenon is explained by assuming the contribution of Si2H6formed by the polymerization of SiH4in the gas phase to polysilicon deposition.
AB - Trench coverage of polysilicon deposited under low pressure using a SiH4–PH3–He system is investigated. The trench coverage becomes poorer with increasing SiH4or PH3partial pressure. This phenomenon is explained by assuming the contribution of Si2H6formed by the polymerization of SiH4in the gas phase to polysilicon deposition.
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U2 - 10.1143/JJAP.23.L482
DO - 10.1143/JJAP.23.L482
M3 - Article
AN - SCOPUS:0021466163
SN - 0021-4922
VL - 23
SP - L482-L484
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 7
ER -