Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures

Go Yusa, H. Sakaki

研究成果: Article査読

221 被引用数 (Scopus)

抄録

The trapping of photogenerated carriers by embedded InAs quantum dots (QDs) has been studied at 77 K in novel GaAs/n-AlGaAs structures. It is found that the concentration Ns of two dimensional electrons at a given gate voltage Vg is persistently increased by light illumination, because of the trapping of holes by QDs. By the interplay of the gate voltage and photocarrier generation, a distinct hysteresis is observed in the Ns-Vg characteristics. A drastic change of electron mobility by a factor of 19 is achieved by light illumination. The applications of this device for a novel light-controllable floating dot memory is suggested.

本文言語English
ページ(範囲)345-347
ページ数3
ジャーナルApplied Physics Letters
70
3
DOI
出版ステータスPublished - 1997 1 20
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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