Trap generation induced by local distortion in amorphous silicon dioxide film

研究成果: Article査読

13 被引用数 (Scopus)

抄録

The generation mechanism, the stable atomic configuration, and the properties of intrinsic charge traps in amorphous silicon dioxide (a-SiO2) are investigated employing the ab initio molecular orbital method applied to a cluster model. It is found that an injected hole is trapped in a nonbonding 2p orbital of an oxygen atom even though there are initially no defects and impurities in a-SiO2. Thus, it acts as a trap for an electron. The local distortion in a-SiO2 structure, especially the stretching of a Si-O-Si, induces the hole trapping. It is also found that the effect of the local distortion on electron trapping is small.

本文言語English
ページ(範囲)1540-1543
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
35
2 SUPPL. B
DOI
出版ステータスPublished - 1996 2
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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