The generation mechanism, the stable atomic configuration, and the properties of intrinsic charge traps in amorphous silicon dioxide (a-SiO2) are investigated employing the ab initio molecular orbital method applied to a cluster model. It is found that an injected hole is trapped in a nonbonding 2p orbital of an oxygen atom even though there are initially no defects and impurities in a-SiO2. Thus, it acts as a trap for an electron. The local distortion in a-SiO2 structure, especially the stretching of a Si-O-Si, induces the hole trapping. It is also found that the effect of the local distortion on electron trapping is small.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|号||2 SUPPL. B|
|出版ステータス||Published - 1996 2|
ASJC Scopus subject areas
- Physics and Astronomy(all)