Trap elimination and injection switching at organic field effect transistor by inserting an alkane (C44H90) layer

Satoshi Ogawa, Yasuo Kimura, Michio Niwano, Hisao Ishii

研究成果: Article査読

36 被引用数 (Scopus)

抄録

Recently, it was proposed in the literature that the electron trap on a hydroxyl-containing dielectric interface of an organic field effect transistor (OFET) hinders its n type operation. The authors fabricated pentacene and fullerene OFETs with a hydroxyl-free insulating material, a long-chain alkane, i.e., tetratetracontate (TTC), C44 H90 layer coated on the Si O2 dielectric layer. The displacement current measurements clearly demonstrated that the electron trap of the Si O2 surface is suppressed by the TTC layer. For a pentacene FET with an Al electrode and Si O2 dielectric layer, a p type operation was observed, while the operation mode was switched to the n type by the insertion of TTC on the Si O2 interface. By simple patterning of the TTC layer to produce a bipolar injection, the authors fabricated an ambipolar pentacene FET with a single kind of metal electrode. Thus TTC is a good material for the surface modification of a dielectric layer in OFETs.

本文言語English
論文番号033504
ジャーナルApplied Physics Letters
90
3
DOI
出版ステータスPublished - 2007
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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