抄録
Transport properties of doped nanotube-based double junctions forming a nanotransistor and investigated within the tight binding formalism. The effects of doping gate length and gate soften have been considered. It is found that in addition to the importance of rotational symmetry in determining transport properties, large gains can be achieved for semiconducting doped tubes.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 353-355 |
| ページ数 | 3 |
| ジャーナル | European Physical Journal D |
| 巻 | 8 |
| 号 | 3 |
| DOI | |
| 出版ステータス | Published - 2001 9月 |
ASJC Scopus subject areas
- 原子分子物理学および光学