Transport properties in asymmetric InAs/GaSb and InAs/AlSb/GaSb heterostructures sandwiched by AlGaSb layers were studied. For the InAs/GaSb structures, partially compensated quantum Hall effects arising from the electron-hole hybridization were observed. By changing the thickness of each layer, the energy positions of the conduction band and the valence band can be controlled independently. In InAs/AlSb/GaSb structures, we tried to control the hybridization strength by varying the AlSb barrier thickness. Magnetoresistance measurements, in which the magnetic field was applied perpendicular and parallel to the surface, and cyclotron resonance (CR) measurements show that there is a clear transition from the electron-hole-hybridized system to the electron-hole-independent system. The transition point appeared at around the 2-nm-barrier thickness in all experiments, suggesting a dominant role of the overlap of electron and hole wave functions. According to the absorption peak shapes in the CR measurements, the hybridized system can be further classified as strongly hybridized or weakly hybridized. Only in the weakly hybridized system was the Shubnikov–de Haas–like oscillation due to the short-range scattering by the hole potential observed in the electron CR absorption peak.
|ジャーナル||Physical Review B - Condensed Matter and Materials Physics|
|出版ステータス||Published - 2003 5 15|
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