Transport mechanism of interfacial network forming atoms during silicon oxidation

Hiroyuki Kageshima, Masahi Uematsu, Kazuto Akagi, Shinji Tsuneyuki, Toru Akiyama, Kenji Shiraishi

研究成果: Article査読

15 被引用数 (Scopus)

抄録

A first-principles study on the energetics of the structural transformation at the interfaces revealed that oxygen vacancies can accompany the high density oxide regions formed during the silicon oxidation. The vacancies can also promote the effective out-migration of these regions, which allows the easier oxide viscous flow to release the interfacial strain. Compared with this mechanism, self-interstitials are rarely formed in the silicon substrate. These results also suggest defect formation mechanisms around the interfaces.

本文言語English
ページ(範囲)694-699
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
2 A
DOI
出版ステータスPublished - 2006 2月 8
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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