Transport in gated undoped GaAs/AlxGa1−xAs heterostructures in the high density and high mobility range

J. Herfort, Y. Hirayama

研究成果: Article査読

15 被引用数 (Scopus)

抄録

The two‐dimensional electron gas with electron densities higher than 1016 m−2 which is formed at the interface in undoped GaAs/AlxGa1−xAs heterostructure by the electric field generated by a top gate is studied. Despite the high electron density in the sample, rather high mobilities of about 100 m2/Vs can be achieved with sufficient small gate leakage currents. The population of the second subband is studied from Shubnikov‐de Haas measurements in these devices.

本文言語English
ページ(範囲)3360-3362
ページ数3
ジャーナルApplied Physics Letters
69
22
DOI
出版ステータスPublished - 1996 11月 25
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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