Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers

D. H. Kim, D. K. Kim, J. U. Cho, S. Y. Park, S. Isogami, M. Tsunoda, M. Takahashi, E. E. Fullerton, Y. K. Kim

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We report the efficacy of CoFeB/FeNiSiB hybrid ferromagnetic layers as free layers in magnetic tunnel junctions. A junction with a CoFeB (2.25 nm)/FeNiSiB (0.75 nm) free layer exhibited a tunneling magnetoresistance ratio and a resistance-area product value of 130% and 25 Ωμm 2, respectively. The critical current density for spin transfer torque (STT) switching was 2.3 MA/cm 2. This study suggests that the addition of an amorphous FeNiSiB in the free layer enhances the magnetotransport properties.

本文言語English
論文番号093913
ジャーナルJournal of Applied Physics
111
9
DOI
出版ステータスPublished - 2012 5 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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