Transition metal complex reaction etching with neutral beam and its mechanism investigated by first-principles calculation

Tomohiro Kubota, Yoshiyuki Kikuchi, Seiji Samukawa

研究成果: Conference contribution

抄録

Mechanism of a recently reported new etching method of transition metal using ethanol gas and oxygen and argon neutral beams at low temperature was investigated by first-principles calculation based on density functional theory. Tantalum etching was studied. It was found that adsorption of ethanol on both of tantalum oxide and metallic tantalum. Then 'hydrogen movement' reaction can occur by argon neutral beam bombardment, and it weaken chemical bonds at the oxide surface. The etching process is like following: (1) oxidation of metal surface, (2) adsorption of ethanol, and (3) hydrogen movement. Especially, the 'hydrogen movement' is the reason why oxidation is needed. Such understanding should be useful to design new etching processes using transition metal complex.

本文言語English
ホスト出版物のタイトル16th International Conference on Nanotechnology - IEEE NANO 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ページ937-940
ページ数4
ISBN(電子版)9781509039142
DOI
出版ステータスPublished - 2016 11 21
イベント16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
継続期間: 2016 8 222016 8 25

出版物シリーズ

名前16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
国/地域Japan
CitySendai
Period16/8/2216/8/25

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学

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