Transient stimulated emission from multi-split-gated graphene structure

A. Satou, F. T. Vasko, T. Otsuji, V. V. Mitin

研究成果: Article

1 引用 (Scopus)

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Mechanism of transient population inversion in graphene with multi-split (interdigitated) top-gate and grounded back gate is suggested and examined for the mid-infrared spectral region. Efficient stimulated emission after fast lateral spreading of carriers due to drift-diffusion processes is found for the case of a slow electron-hole recombination in the passive region. We show that with the large gate-to-graphene distance, the drift process always precedes the diffusion process, due to the ineffective screening of the inplane electric field by the gates. Conditions for lasing with a gain above 100 cm-1 are found for cases of single- and multi-layer graphene placed in the waveguide formed by the top and back gates. Both the waveguide losses and temperature effects are analysed.

元の言語English
記事番号055103
ジャーナルJournal of Physics D: Applied Physics
47
発行部数5
DOI
出版物ステータスPublished - 2014 2 5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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