Transformation behavior of Ni-Mn-Ga thin films

V. A. Chernenko, M. Ohtsuka, M. Kohl, V. V. Khovailo, T. Takagi

研究成果: Article査読

77 被引用数 (Scopus)

抄録

The transformation behavior of Ni-Mn-Ga submicron polycrystalline thin films was investigated with respect to target composition, different substrates, annealing temperature and film thickness. Two series of thin films (A and B) with thicknesses ranging from 0.1 to 5 νm were deposited onto alumina ceramic, poly-vinyl alcohol (PVA), quartz and glass by the RF magnetron sputtering technique. The use of the targets of Ni49.5Mn 28.0Ga22.5 and Ni52Mn24Ga 24 facilitated the formation of 10M and 14M martensitic structures for heat treated films A and B, respectively. Magnetization curves and temperature dependences of resistivity demonstrated anomalies and features typical for the bulk Heusler alloys exhibiting both martensitic and ferromagnetic transformations. The transformation temperatures and distribution of magnetic moments were found to be dependent on the film thickness. A magnetoresistance ratio of 1.5% was achieved at a maximum field of 1.5 T at room temperature.

本文言語English
ページ(範囲)S245-S252
ジャーナルSmart Materials and Structures
14
5
DOI
出版ステータスPublished - 2005 10月 1

ASJC Scopus subject areas

  • 信号処理
  • 土木構造工学
  • 原子分子物理学および光学
  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 電子工学および電気工学

フィンガープリント

「Transformation behavior of Ni-Mn-Ga thin films」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル