Transfer of hydrogen atoms and site exchange between Ge and Si atoms during germane adsorption at Si (001)

Takeshi Murata, Maki Suemitsu

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Germane (GeH4) adsorption at Si(001) at room temperature has been investigated through observations of surface hydrides by means of temperature-programmed desorption and multiple-internal-reflection Fourier-transformed infrared spectroscopy. For surfaces with considerable concentration of dimer vacancies, prepared by in-situ thermal cleaning followed by rapid cooling, saturation with germane presented almost full coverage of SiH without any Ge or Si-higher hydrides, which strongly suggests site exchange between ad-Ge and substrate Si atoms. For a smoother surface prepared by forming a Si epilayer, the Ge dihydride is much populated at higher doses of germane. From measurements using (1 × 2) single domain surface and polarized lights in FTIR, the Ge dihydrides are found to be at their "in-dimer" position rather than the "intra-row" position.

本文言語English
ページ(範囲)23-27
ページ数5
ジャーナルShinku/Journal of the Vacuum Society of Japan
48
1
DOI
出版ステータスPublished - 2005

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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