抄録
The transfer characteristic of relative phase of the third-order intermodulation distortion (IM3) of a GaAs FET amplifier is measured and analyzed. The measurement system and method are also described. For drives in the weakly nonlinear region, the measured relative phase of IMa is equal to that of the carrier and is in agreement with the analysis results using Volterra-series representation. For drives in the saturation region, the measured relative phase of IM3 versus the input power moves drastically compared with that of the carrier and is in agreement with numerical analysis using discrete Fourier transform. Comparison between measured and analytical results shows the drastic move of IMs relative phase is caused by the generation of IMa due to AM-PM conversion. The measured results and the measurement method are useful for the design and adjustment of predistortion-type linearizers for GaAs FET high-power amplifiers.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 2509-2514 |
| ページ数 | 6 |
| ジャーナル | IEEE Transactions on Microwave Theory and Techniques |
| 巻 | 45 |
| 号 | 12 PART 2 |
| DOI | |
| 出版ステータス | Published - 1997 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 放射線
- 凝縮系物理学
- 電子工学および電気工学