Using a Si(111) surface with atomistically flat wide terraces, topography change of the SiO2/Si interfaces during thermal oxidation was investigated by means of atomic force microscopy. We observed vestiges of oxidation at the interfaces of SiO2 films with various thicknesses at three different temperatures. We found that the SiO2/Si interface consisted of at least three layers over the entire range of our experiments. This result indicates that layer-by-layer oxidation does not progress at the SiO2/Si interfaces strictly. The densities of vestiges get increased as the oxidation temperature decreased. This topographic change arises from the different temperature dependence between two oxidation rates in parallel and perpendicular to the SiO2/Si interface.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2003 4 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)