TMR design methodology for SPin-transfer torque RAM (SPRAM) with nonvolatile and SRAM compatible operations

R. Takemura, T. Kawahara, J. Hayakawa, K. Miura, K. Ito, Michihiko Yamanouchi, S. Ikeda, H. Takahashi, H. Matsuoka, H. Ohno

研究成果: Conference contribution

8 引用 (Scopus)

抜粋

We propose a tunnel magneto resistance (TMR) design methodology for SPRAM that takes into account the disturbances during read operations and the data retention periods. We have clarified that the thermal stability factor (E/k BT) of TMR must be higher than 64 to ensure a 10-year data retention and a continual non-destructive read-operation. Moreover, the thick synthetic ferromagnetic free layer with Fe-rich CoFeB can achieve a E/kBT of 64 while maintaining a low write cell current of less than 400 μA/cell with a 100 x 160 nm2 TMR.

元の言語English
ホスト出版物のタイトル2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD
ページ54-55
ページ数2
DOI
出版物ステータスPublished - 2008 9 1
イベント2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, NVSMW/ICMTD - Opio, France
継続期間: 2008 5 182008 5 22

出版物シリーズ

名前2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD

Other

Other2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, NVSMW/ICMTD
France
Opio
期間08/5/1808/5/22

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • これを引用

    Takemura, R., Kawahara, T., Hayakawa, J., Miura, K., Ito, K., Yamanouchi, M., Ikeda, S., Takahashi, H., Matsuoka, H., & Ohno, H. (2008). TMR design methodology for SPin-transfer torque RAM (SPRAM) with nonvolatile and SRAM compatible operations. : 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD (pp. 54-55). [4531822] (2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design, Proceedings, NVSMW/ICMTD). https://doi.org/10.1109/NVSMW.2008.22