TiN capping effect on high temperature annealed RE-oxide MOS capacitors for scaled EOT

D. Kitayama, T. Koyanagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

The effect of TiN capping on high temperature annealed W gated La 2O3 dielectrics capacitors has been characterized. The increase in EOT has been well suppressed with TiN capping and a 0.55 nm EOT has been achieved even after an 900°C annealing. The electrical characterization has revealed a significant reduction in the capacitance-voltage (C-V) hysteresis and leakage current density when the annealing temperature is 900°C or higher.

本文言語English
ホスト出版物のタイトルPhysics and Technology of High-k Materials 8
出版社Electrochemical Society Inc.
ページ527-535
ページ数9
3
ISBN(電子版)9781607681724
ISBN(印刷版)9781566778220
DOI
出版ステータスPublished - 2010
外部発表はい

出版物シリーズ

名前ECS Transactions
番号3
33
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

ASJC Scopus subject areas

  • 工学(全般)

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