The EL (electroluminescence) time-decay of the 1.54μm emission of Er3+ doped in InP was investigated between 77K and 330K. The major decay was almost exponential and the decay time showed little thermal quenching, decreasing from 2ms at 77K to 1ms at 330K. This result contrasts with the large thermal quenching of the PL (photo-luminescence) time-decay, suggesting different excited Er3+ centers between EL and PL. The results are analyzed and the excitation and quenching mechanisms are discussed.
|出版ステータス||Published - 1992|
|イベント||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
継続期間: 1992 8 26 → 1992 8 28
|Other||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||92/8/26 → 92/8/28|
ASJC Scopus subject areas