Time-resolved photoluminescence of a two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterostructure fabricated on ammonothermal GaN substrates

Shigefusa F. Chichibu, Kouji Hazu, Yuji Kagamitani, Takeyoshi Onuma, Dirk Ehrentraut, Tsuguo Fukuda, Tohru Ishiguro

研究成果: Article査読

8 被引用数 (Scopus)

抄録

A characteristic photoluminescence signal is identified for a two-dimensional electron gas (2DEG) confined at an Al0.2Ga 0.8N/GaN heterointerface fabricated on an ammonothermal GaN (AT-GaN) substrate. The use of a gas-phase synthesized NH4Cl acidic mineralizer reduced oxygen contamination in AT-GaN by two orders of magnitude, and metalorganic vapor phase epitaxy of atomically smooth, coherent AlGaN/GaN heterostructures was realized. The emission originating from the 2DEG is interpreted using self-consistent Schrödinger-Poisson calculation, taking the interfacial immobile charge due to polarization discontinuity into account. The initial decay time at low temperature was close to that of the bulk free excitons, reflecting the lifetime of photoexcited holes.

本文言語English
論文番号045501
ジャーナルApplied Physics Express
4
4
DOI
出版ステータスPublished - 2011 4

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント 「Time-resolved photoluminescence of a two-dimensional electron gas in an Al<sub>0.2</sub>Ga<sub>0.8</sub>N/GaN heterostructure fabricated on ammonothermal GaN substrates」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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