TiC films formed by multi-stacking process for diamond contact metal electrodes

Y. Tanaka, K. Kakushima, P. Ahmet, Y. Kataoka, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, S. Yamasaki, H. Iwai

研究成果: Conference contribution

抄録

TiC films have been formed by stacking multiple thin Ti and C layers with subsequent annealing on diamond substrates. Thermally stable contact characteristics have been obtained with TiC electrodes, owing to the suppression of reaction between TiC and diamond. Workfunction of TiC film has been 4.3 eV. Contact resistivity of one order of magnitude lower than the Ti/n-diamond has been obtained.

本文言語English
ホスト出版物のタイトルLow-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
ページ335-340
ページ数6
6
DOI
出版ステータスPublished - 2012
外部発表はい
イベントSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States
継続期間: 2012 10 72012 10 12

出版物シリーズ

名前ECS Transactions
番号6
50
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
CountryUnited States
CityHonolulu, HI
Period12/10/712/10/12

ASJC Scopus subject areas

  • Engineering(all)

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