Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure

K. Tsuneishi, J. Chen, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

研究成果: Conference contribution

抄録

Current-voltage characteristics of Ti and TiSi2 electrodes on AlGaN/GaN structures have been characterized. Ti electrode has revealed annealing temperature dependent properties presumably due to excess reaction with AlGaN layer. Owing to inert properties of TiSi2, stable current-voltage characteristics have been obtained.

本文言語English
ホスト出版物のタイトルGallium Nitride and Silicon Carbide Power Technologies 2
出版社Electrochemical Society Inc.
ページ447-450
ページ数4
3
ISBN(印刷版)9781607683513
DOI
出版ステータスPublished - 2013
外部発表はい
イベント2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting - Honolulu, HI, United States
継続期間: 2012 10 72012 10 12

出版物シリーズ

名前ECS Transactions
番号3
50
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting
国/地域United States
CityHonolulu, HI
Period12/10/712/10/12

ASJC Scopus subject areas

  • 工学(全般)

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