THz double-grating gate transistor detectors in high magnetic fields

D. But, N. Dyakonova, D. Coquillat, F. Teppe, W. Knap, T. Watanabe, Y. Tanimoto, S. Boubanga Tombet, T. Otsuji

研究成果: Article査読

抄録

Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.

本文言語English
ページ(範囲)1080-1082
ページ数3
ジャーナルActa Physica Polonica A
122
6
DOI
出版ステータスPublished - 2012 12

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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