Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides

Po Chun Yeh, Yun Wei Lin, Yue Lin Huang, Jui Hung Hung, Bo Ren Lin, Lucas Yang, Cheng Han Wu, Tzu Kuan Wu, Chao Hsin Wu, Lung Han Peng

研究成果: Article › 査読

4 被引用数 (Scopus)

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「Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides

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Earth and Planetary Sciences

Physics

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Material Science