Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides

Po Chun Yeh; Yun Wei Lin; Yue Lin Huang; Jui Hung Hung; Bo Ren Lin; Lucas Yang; Cheng Han Wu; Tzu Kuan Wu; Chao Hsin Wu; Lung Han Peng

doi:10.7567/APEX.8.084101

Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides

Po Chun Yeh, Yun Wei Lin, Yue Lin Huang, Jui Hung Hung, Bo Ren Lin, Lucas Yang, Cheng Han Wu, Tzu Kuan Wu, Chao Hsin Wu, Lung Han Peng

研究成果: Article › 査読

4 被引用数 (Scopus)

抄録

An enhancement-mode AlGaN/GaN inverted-trapezoid trigate MOS high-electron-mobility transistor (HEMT), featuring double-layer oxides formed by photoenhanced chemical oxidation and plasma-enhanced atomic layer deposition (PEALD) oxide deposition, was shown to support the threshold voltage (V_th) with linear slopes of 0.36 V/nm and -0.32 V/μm2 scaled with recess depth and device area, respectively. The proposed device exhibited V_th of 1.2 V, current on/off ratio of 10⁸, and f_T/f_max of 9/36 GHz at a gate length/width of 250/360 nm. These observations can be ascribed to the combined effects of (a) an interfacial negative space charge of 3.2 μC/cm² in the gate-recessed device that partially compensates for the spontaneous charge and (b) side-wall passivation that preserves the high-mobility channel.

本文言語	English
論文番号	084101
ジャーナル	Applied Physics Express
巻	8
号	8
DOI	https://doi.org/10.7567/APEX.8.084101
出版ステータス	Published - 2015 8月 1
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.7567/APEX.8.084101

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引用スタイル

Yeh, P. C., Lin, Y. W., Huang, Y. L., Hung, J. H., Lin, B. R., Yang, L., Wu, C. H., Wu, T. K., Wu, C. H., & Peng, L. H. (2015). Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides. Applied Physics Express, 8(8), [084101]. https://doi.org/10.7567/APEX.8.084101

Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides. / Yeh, Po Chun; Lin, Yun Wei; Huang, Yue Lin その他.

In: Applied Physics Express, Vol. 8, No. 8, 084101, 01.08.2015.

研究成果: Article › 査読

Yeh, PC, Lin, YW, Huang, YL, Hung, JH, Lin, BR, Yang, L, Wu, CH, Wu, TK, Wu, CH & Peng, LH 2015, 'Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides', Applied Physics Express, vol. 8, no. 8, 084101. https://doi.org/10.7567/APEX.8.084101

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abstract = "An enhancement-mode AlGaN/GaN inverted-trapezoid trigate MOS high-electron-mobility transistor (HEMT), featuring double-layer oxides formed by photoenhanced chemical oxidation and plasma-enhanced atomic layer deposition (PEALD) oxide deposition, was shown to support the threshold voltage (Vth) with linear slopes of 0.36 V/nm and -0.32 V/μm2 scaled with recess depth and device area, respectively. The proposed device exhibited Vth of 1.2 V, current on/off ratio of 108, and fT/fmax of 9/36 GHz at a gate length/width of 250/360 nm. These observations can be ascribed to the combined effects of (a) an interfacial negative space charge of 3.2 μC/cm2 in the gate-recessed device that partially compensates for the spontaneous charge and (b) side-wall passivation that preserves the high-mobility channel.",

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AU - Hung, Jui Hung

AU - Lin, Bo Ren

AU - Yang, Lucas

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