Three-terminal spintronics memory devices with perpendicular anisotropy

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

The focus of spintronics memory device that constitutes MRAM has so far been largely on two-terminal magnetic tunnel junction with spin-transfer torque magnetization switching, because of its superior area efficiency. In a number of cases, however, where switching speed and relaxed control of parameters are more preferred than the reduced area, three-terminal spintronics device is an equally, if not more, attractive alternative. Here 'three-terminal' refers to the number of terminals used for read and write operations. This configuration allows realizing high-speed and high-reliability device operation, suitable for replacement of semiconductor-based working memories such as SRAMs but with nonvolatility and reduced area to overcome issues of scaling limit and increasing power consumption [1]. Two types of three-terminal devices are currently under development; one utilizes a current-induced domain wall (DW) motion and the other a spin-orbit torque (SOT) induced magnetization switching for their write operation. Here we review and compare their basic operation principles and the technological prospects.

本文言語English
ホスト出版物のタイトル2015 IEEE International Magnetics Conference, INTERMAG 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479973224
DOI
出版ステータスPublished - 2015 7 14
イベント2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
継続期間: 2015 5 112015 5 15

出版物シリーズ

名前2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
国/地域China
CityBeijing
Period15/5/1115/5/15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学
  • 表面、皮膜および薄膜

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