抄録
Three-step phase-shifting imaging ellipsometry is proposed for the dynamic measurement of a nanofilm's thickness profile in two dimensions. The designed apparatus consists of an ellipsometric optical configuration and an image-processing unit to perform phase-shifting imaging ellipsometry measurements, a key technique used to achieve dynamic and two-dimensional measurements. The uncertainties of the ellipsometric parameters ψ and Δ were evaluated based on the developed optical system and the proposed three-step phase-shifting technique. The thickness profile of a SiO2 nanofilm on a silicon substrate was measured to calibrate the proposed apparatus; results were comparable to those obtained by a commercial spectroscopic ellipsometer. The measured thickness profiles are almost flat over the area of 1.10 mm × 2.21 mm with the spatial resolutions of 1.58 and 4.62 μm in the horizontal and vertical directions, respectively. The differences of average thickness between the proposed apparatus and a commercial spectroscopic ellipsometer were less than 3 nm. Furthermore, measurement precision was validated by obtaining a standard deviation of less than 2.5 nm.
本文言語 | English |
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ページ(範囲) | 145-150 |
ページ数 | 6 |
ジャーナル | Optics and Lasers in Engineering |
巻 | 112 |
DOI | |
出版ステータス | Published - 2019 1月 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 原子分子物理学および光学
- 機械工学
- 電子工学および電気工学