Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals

Yutaka Ohno, Kaihei Inoue, Kozo Fujiwara, Momoko Deura, Kentaro Kutsukake, Ichiro Yonenaga, Yasuo Shimizu, Koji Inoue, Naoki Ebisawa, Yasuyoshi Nagai

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Three-dimensional distribution of oxygen atoms at small-angle tilt boundaries (SATBs) in Czochralski-grown p-type silicon ingots was investigated by atom probe tomography combined with transmission electron microscopy. Oxygen gettering along edge dislocations composing SATBs, post crystal growth, was observed. The gettering ability of SATBs would depend both on the dislocation strain and on the dislocation density. Oxygen atoms would agglomerate in the atomic sites under the tensile hydrostatic stress larger than about 2.0 GPa induced by the dislocations. It was suggested that the density of the atomic sites, depending on the tilt angle of SATBs, determined the gettering ability of SATBs.

本文言語English
論文番号251603
ジャーナルApplied Physics Letters
106
25
DOI
出版ステータスPublished - 2015 6 22

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル