Three dimensional characterization of dopant distribution in polycrystalline silicon by laser-assisted atom probe

K. Inoue, F. Yano, A. Nishida, T. Tsunomura, T. Toyama, Y. Nagai, M. Hasegawa

研究成果: Article査読

22 被引用数 (Scopus)

抄録

Dopant distribution in polycrystalline Si of n -type metal-oxide- semiconductor field effect transistor was measured by laser-assisted three dimensional atom probe. Segregation of As and P atoms to grain boundaries and at the interface between gate and gate oxide, resulting from different mechanisms, i.e., volume diffusion in the bulk and grain boundary diffusion at the interface, was clearly observed. Concentration profiles that show such clear segregation were directly obtained by atomic-resolution measurement.

本文言語English
論文番号133507
ジャーナルApplied Physics Letters
93
13
DOI
出版ステータスPublished - 2008

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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